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- Keywords quantum well;hydrogenic impurity;effect of pressure; 量子阱;类氢杂质;压力效应;
- Keywords quantum dot quantum well;tailoring of energy;enhancement of photoluminescence; 量子点量子阱晶体;能带剪裁;加强的带边荧光峰;
- Keywords quantum well thin film;resonant tunneling structure;macro-accelerometer;Meso-piezoresistance effect;electromechanical character;Raman;experiment design and test; 量子阱薄膜;共振隧穿结构;微加速度传感结构;介观压阻效应;机电特性;拉曼;实验设计和测试;
- Keywords quantum wells;superlattices;linear electrooptic effect （LEO）;review; 量子阱;超晶格;线性电光效应（LEO）;
- Dual band quantum well infrared photodetector large format array chips[J]. 引用该论文 种明;马文全;苏艳梅;张艳冰;胡小燕;陈良惠.
- Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用该论文 张福厚;宋珂;邢建平;郝修田;曾一平.
- Theory models for quantum well states in photoemission spectroscopy[J]. 引用该论文 王得勇;刘杰;贾金锋;刘洪;薛其坤.
- E. H. Li, Quantum well intermixing, Gordon and Breach Science Publishers, 2000. 施敏;半导体物理元件与制作技术(第二版);国立交通大学出版社;民国91年.
- Detectors (contd.): Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 23光侦测器(续)：垂直与平面结构。量子井次能带间跃迁型光侦测器。
- GaSb epilayers and GaAsSb/GaAs quantum wells were investigated. 所研究的材料有锑化镓以及锑砷化镓/砷化镓量子井。
- New progress of exciton condensation in coupled quantum wells[J]. 引用该论文 闫占彪;郭震宁.
- Intersubband optical absorption in hyperbolic quantum wells[J]. 引用该论文 谭鹏;路洪.
- Detectors (contd.) : Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 垂直与平面结构。量子井次能带间跃迁型光侦测器。
- Finally, we got the 940nm InGaAs/AlGaAs strained quantum well semiconductor laser. 最终获得InGaAs/AlGaAs结构的940nm应变量子阱半导体激光器。
- Laser Diodes (contd.): In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 21雷射二极体(续)：平面雷射：双异质结构，量子井，多重电极，面发射。
- Laser Diodes (contd.) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 平面镭射：双异质结构，量子井，多重电极，面发射。
- InGaAs/GaAs/AlGaAs Strained Quantum Well Lasers with Window Regions Fabricated by Impurity free Vacancy Disordering[J]. 引用该论文 徐遵图;徐俊英;杨国文;张敬明;李秉臣;陈良惠;沈光地.
- The spectral width was increased from 18nm of normal integrated SLD devices to 37nm of quantum well intermixed devices. 和普通的集成超辐射器件相比，在相近的输出功率下，器件的光谱宽度从18nm提高到了37nm。
- AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology[J]. 引用该论文 李献杰;刘英斌;冯震;过帆;赵永林;赵润;周瑞;娄辰;张世祖.
